BFP183W Description
BFP 183W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 ≤ 205 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 58 °C Junction temperature Ambient temperature Storage temperature Junction - soldering point RthJS K/W 1) TS is...