BFP183W Datasheet | Siemens Semiconductor Group

BFP 183W NPN Silicon RF Transistor - For low noise, high-gain broadband amplifiers at collector currents from 2 m A to 30 m A - f T = 8 GHz F = 1.2 d B at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 183W RHs Q62702-F1503 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 m W 450 150 - 65 ... + 150 - 65 ... + 150 ≤ 205 °C m A Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 58 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group Dec-12-1996 BFP 183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 n A 100 µA 1 50 200 IC = 1 m A, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO h FE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE =...