BFP183W Datasheet and Specifications PDF

The BFP183W is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Max Frequency8 GHz
Height900 µm
Length2 mm
Width1.25 mm
Max Operating Temp150 °C
Part NumberBFP183W Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and . the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-08 BFP183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Coll.
Part NumberBFP183W Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive d. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB.

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