BFP182W
BFP182W is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For low noise, high-gain broadband amplifiers at collector currents from 1 m A to 20 m A
- f T = 8 GHz, NFmin = 0.9 d B at 900 MHz
- Pb-free (Ro HS pliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP182W
Marking
Pin Configuration
RGs 1=E 2=C 3=E 4 = B
- -
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 91 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 35 4 250
150 -55 ... 150
Unit V m A m W °C
Thermal Resistance
Parameter
Symbol
Value
Junction
- soldering point2)
Rth JS
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of Rth JS please refer to Application Note AN077 (Thermal Resistance...
