BFP182 Datasheet and Specifications PDF

The BFP182 is a NPN Silicon RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBFP182 Datasheet
ManufacturerInfineon
Overview BFP182 NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at 3 4 2 1 VPS05178 collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic dis. otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100.
Part NumberBFP182 Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device. acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V,.

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