BFR182 Datasheet and Specifications PDF

The BFR182 is a NPN Silicon RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Frequency8 GHz
Height1 mm
Length2.9 mm
Width1.3 mm
Max Operating Temp150 °C
Part NumberBFR182 Datasheet
ManufacturerSiemens Semiconductor Group
Overview BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device. istics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC =.
Part NumberBFR182 Datasheet
DescriptionLow Noise Silicon Bipolar RF Transistor
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) pack. tion of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-07 BFR182 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage I.

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