BFR182T Datasheet and Specifications PDF

The BFR182T is a NPN Silicon RF Transistor.

Key Specifications

Mount TypeSurface Mount
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Part NumberBFR182T Datasheet
ManufacturerInfineon
Overview BFR182T NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: . °C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V.
Part NumberBFR182T Datasheet
DescriptionSilicon NPN Planar RF Transistor
ManufacturerVishay
Overview BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at. D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherw.

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