| Part Number | BFR35AP Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package • Qualificatio. (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-11-21 BFR35AP Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current V. |
BFR35AP Datasheet and Specifications PDF
The BFR35AP is a Low Noise Silicon Bipolar RF Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Frequency | 5 GHz |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temp | 150 °C |
| Part Number | BFR35AP Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe. Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V µA 10 nA 100 µA 100 40 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 . |
| Part Number | BFR35AP Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance an. (BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICES Collector Cutoff Current VCE= 20V; VBE= 0 10 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2.5V; IC= 0 100 μA hFE DC Current Gain IC= 15mA ; VCE= 8V 40 200 fT Current. |