Datasheet4U Logo Datasheet4U.com

BFR35AP - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – BFR35AP

Datasheet Details

Part number BFR35AP
Manufacturer INCHANGE
File Size 205.19 KB
Description NPN Transistor
Datasheet download datasheet BFR35AP Datasheet
Additional preview pages of the BFR35AP datasheet.

Product details

Description

Low Noise Figure NF = 1.8 dB TYP.@VCE = 6 V, IC = 2 mA, f = 900 MHz High Gain ︱S21e︱2 = 12.5 dB TYP.@VCE= 8 V,IC = 15 mA,f = 900 MHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion broadband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Volt

📁 Similar Datasheet

  • BFR35A - NPN SILICON TRANSISTOR (Siemens Semiconductor Group)
  • BFR35AR - NPN SILICON TRANSISTOR (Siemens Semiconductor Group)
  • BFR35 - NPN SILICON TRANSISTOR (Siemens Semiconductor Group)
  • BFR30 - N-channel field-effect transistors (NXP)
  • BFR30LT1 - JFET Amplifiers (Motorola Inc)
  • BFR31 - N-channel field-effect transistors (NXP)
  • BFR31LT1 - JFET Amplifiers (Motorola Inc)
  • BFR340F - Low Noise Silicon Bipolar RF Transistor (Infineon Technologies AG)
Other Datasheets by INCHANGE
Published: |