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isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low distortion broadband amplifiers and
oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCES Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
20
V
20
V
15
V
2.5
V
30
mA
4
mA
0.28
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
BFR35AP
isc website:www.