BFR35AP - Low Noise Silicon Bipolar RF Transistor

Infineon Technologies AG

Datasheet Details

Part number	BFR35AP
Manufacturer	Infineon Technologies AG
File Size	600.51 KB
Description	Low Noise Silicon Bipolar RF Transistor
Datasheet	BFR35AP Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BFR35AP	NPN Silicon RF Transistor	Siemens Semiconductor Group
BFR35AP	NPN Transistor	INCHANGE
BFR35A	NPN SILICON TRANSISTOR	Siemens Semiconductor Group
BFR35AR	NPN SILICON TRANSISTOR	Siemens Semiconductor Group
BFR35	NPN SILICON TRANSISTOR	Siemens Semiconductor Group

Other Datasheets by Infineon Technologies AG

Part Number	Description
BFR340F	Low Noise Silicon Bipolar RF Transistor
BFR340L3	Low Noise Silicon Bipolar RF Transistor
BFR340T	NPN Silicon RF Transistor
BFR360	NPN Silicon RF Transistor
BFR360	NPN Silicon RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR35AP ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR35AP Marking Pin Configuration GEs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 15 20 20 2.5 45 4 280 150 -55 ...