BFR35AP
BFR35AP is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA
- Pb-free (RoHS pliant) package
- Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR35AP
Marking
Pin Configuration
GEs
1=B
2=E
3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage...
