BFR360F
BFR360F is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- Low noise amplifier for low current applications
- Collector design supports 5 V supply voltage
- For oscillators up to 3.5 GHz
- Low noise figure 1.0 dB at 1.8 GHz
- Pb-free (RoHS pliant) and halogen-free thin small flat package with visible leads
- Qualification report according to AEC-Q101 available
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base...