• Part: BFR360F
  • Description: Low Noise Silicon Bipolar RF Transistor
  • Manufacturer: Infineon
  • Size: 572.33 KB
Download BFR360F Datasheet PDF
Infineon
BFR360F
BFR360F is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor - Low noise amplifier for low current applications - Collector design supports 5 V supply voltage - For oscillators up to 3.5 GHz - Low noise figure 1.0 dB at 1.8 GHz - Pb-free (RoHS pliant) and halogen-free thin small flat package with visible leads - Qualification report according to AEC-Q101 available 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360F Marking Pin Configuration FBs 1=B 2=E 3=C Package TSFP-3 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base...