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BFR360T - NPN Silicon RF Transistor

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Datasheet Details

Part number BFR360T
Manufacturer Infineon Technologies AG
File Size 100.39 KB
Description NPN Silicon RF Transistor
Datasheet download datasheet BFR360T Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFR360T NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 3 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360T Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS  81°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) Marking FBs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ...