BFR360L3
BFR360L3 is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- Low voltage/ Low current operation
- For low noise amplifiers
- For Oscillators up to 3.5 GHz and Pout > 10 d Bm
- Low noise figure: 1.0 d B at 1.8 GHz
- Pb-free (Ro HS pliant) and halogen-free thin small leadless package
- Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR360L3
Marking
Pin Configuration
1=B
2=E
3=C
Package TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 104°C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
6 15 15 2 35 4 210
150 -55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction
- soldering...
