BFY181 Datasheet and Specifications PDF

BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically seale.

ssipation, 2), 3) TS ≤ 137°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 20 2 1) Unit V V V V mA mA mW °C °C °C K/W 175 200 -65
*+200 -65
*+2.

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed m.

* HiRel Discrete and Microwave Semiconductor
* For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
* Hermetically sealed microwave package
* fT = 8 GHz, F = 2.2 dB at 2 GHz
* qualified
* ESA/SCC Detail Spec. No.: 5611/006 BFY 181 Micro-X1 ESD: Electrostatic di.