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BFY181 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Key Features

  • HiRel Discrete and Microwave Semiconductor.
  • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.
  • Hermetically sealed microwave package.
  • fT = 8 GHz, F = 2.2 dB at 2 GHz.
  • qualified.
  • ESA/SCC Detail Spec. No. : 5611/006 BFY 181 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 181 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Packa.

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📁 Similar Datasheet

Part Number Description Manufacturer
BFY181 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY180 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY182 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY183 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY193 HiRel NPN Silicon RF Transistor Infineon Technologies AG

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
BFY182 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY183 HiRel NPN Silicon RF Transistor
BFY193 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
BFY196 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.