BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)

Product Overview

Siemens Semiconductor Group

Part number	BFY180
Manufacturer	Siemens Semiconductor Group
File Size	121.43 KB
Description	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
Datasheet	BFY180 Datasheet
Additional preview pages of the BFY180 datasheet.

HiRel Discrete and Microwave Semiconductor.
For low power amplifiers at collector currents from 0.2 to 2.5 mA.
Hermetically sealed microwave package.
fT = 6.5 GHz, F = 2.6 dB at 2 GHz.
qualified.
ESA/SCC Detail Spec. No. : 5611/006 BFY 180 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 180 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Qua.

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Published: Mar 23, 2005 |