BFY183 Datasheet PDF - Infineon Technologies AG HiRel NPN Silicon RF Transistor Specs

BFY183 - HiRel NPN Silicon RF Transistor

Datasheet Summary

Description

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Features

4.
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Hermetically sealed microwave package.
fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation.
Space Qualified ESCC Detail Spec. No. : 5611/006 Type Variant No. 05.

Datasheet Details

Part number	BFY183
Manufacturer	Infineon Technologies AG
File Size	388.31 KB
Description	HiRel NPN Silicon RF Transistor
Datasheet	BFY183 Datasheet
Additional preview pages of the BFY183 datasheet.

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Full PDF Text Transcription

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BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation  Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY183(ES) BFY183(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc. to Chart F3 in ESCC Generic Specification No. 5010 3 2 Package Micro-X1 Datasheet www.infineon.

Published: Mar 23, 2005 |