BFY183 Datasheet | Infineon

Hi Rel NPN Silicon RF Transistor BFY183(ES) Features - For low noise, high-gain broadband amplifiers at collector currents from 2 m A to 30 m A - Hermetically sealed microwave package - f T= 8GHz F = 2.3 d B at 2 GHz Product validation - Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type ment Pin Configuration BFY183(ES) BFY183(P)1 For flight use Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc. to Chart F3 in ESCC Generic Specification No. 5010 3 2 Package Micro-X1 Datasheet .infineon. Please read the Important Notice and Warnings at the end of this document 1 of 6 IFAG PSS RFS D2 HIR Issue 5, January 2022 Hi Rel NPN Silicon RF Transistor BFY183(ES) Table of contents Table of contents Features...