BFY183 Datasheet | Siemens Semiconductor Group

Hi Rel NPN Silicon RF Transistor Features - Hi Rel Discrete and Microwave Semiconductor - For low noise, high gain broadband amplifiers at collector currents from 2 m A to 30 m A - Hermetically sealed microwave package - f T = 8 GHz, F = 2.3 d B at 2 GHz - qualified - ESA/SCC Detail Spec. No.: 5611/006 BFY 183 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 183 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1609 Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1713 (see Chapter Order Instructions for ordering example) Table 1 Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 99 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) 2) 2) Maximum Ratings Symbol Limit Values 12 20 20 2 65 5 1) 450 200 - 65 É + 200 - 65 É + 200 < 255 Unit V V V V m A m A m W °C °C °C K/W VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS The maximum permissible base current for VFBE measurements is 20 m A (spot measurement duration < 1 s). TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group Draft A03 1998-04-01 BFY 183 Electrical Characteristics Table 2 Parameter Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0.3 m A 3) Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 Base-emitter forward voltage IE = 30 m A, IC = 0 DC current gain IC = 5 m A, VCE = 6 V 3) DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 90 max. 100 300 50 25 0.5 1 160...