BSS110 Datasheet and Specifications PDF

The BSS110 is a P-Channel Enhancement Mode Field Effect Transistor.

Key Specifications

PackageTO-92-3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBSS110 Datasheet
ManufacturerFairchild Semiconductor
Overview These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize o. BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________.
Part NumberBSS110 Datasheet
DescriptionSIPMOS Small-Signal Transistor
ManufacturerSiemens Semiconductor Group
Overview BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS . 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -50 -1.5 -0.1 -2 -1 5.3 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain curren.
Part NumberBSS110 Datasheet
DescriptionP-channel enhancement mode vertical D-MOS transistor
ManufacturerNXP Semiconductors
Overview P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. handbook, halfpage BSS110 d 1 2 3 g MAM144 s Fig.1 Simplified outline and symbol. PINNING - TO-92 variant PIN 1 2.
* Low threshold voltage
* Direct interface to C-MOS, TTL, etc.
* High speed switching
* No secondary breakdown. APPLICATIONS
* Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. DESCRIPTION P-channel enhancement mo.

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