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BSS110 - P-channel enhancement mode vertical D-MOS transistor

General Description

P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

Fig.1 Simplified outline and symbol.

Key Features

  • Low threshold voltage.
  • Direct interface to C-MOS, TTL, etc.
  • High speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. handbook, halfpage BSS110 d 1 2 3 g MAM144 s Fig.1 Simplified outline and symbol.