BSS110 Datasheet P-channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	BSS110
Manufacturer	Fairchild (now onsemi)
File Size	285.09 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	BSS110_FairchildSemiconductor.pdf

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A.

BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS84 BSS110 Units VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 20.

Brand Logo	Part Number	Description	Manufacturer
	BSS110	SIPMOS Small-Signal Transistor	Siemens Semiconductor
	BSS110	P-channel enhancement mode vertical D-MOS transistor	NXP

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