BSS129 Datasheet and Specifications PDF

The BSS129 is a SIPMOS Small-Signal Transistor.

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Part NumberBSS129 Datasheet
ManufacturerSiemens Semiconductor Group
Overview SIPMOS® Small-Signal Transistor BSS 129 q q q q q q q VDS 240 V ID 0.15 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code T. Group 1 04.97 BSS 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS =
* 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 240 V, VGS =
* 3 V Tj =.
Part NumberBSS129 Datasheet
DescriptionN-Channel Depletion-Mode MOS Transistor
ManufacturerSiliconix
Overview 888129 N-Channel Depletion-Mode MOS Transistor . HS i l i c o n i x incorporated PRODUCT SUMMARY V(BR)OSV rOS(ON) 10 (V) (.n ) (A) PACKAGE 230 20 0.15. TO-92 CORM CD = Center Drain. RM = R. ce Cutoff Voltage Gate-Body Leakage Drain Cutoff Current Drain-Source On-Resistance Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)DSV VGS(OFF) IGSS ID(OFF) rDS(ON) gFS TEST CONDITIONS TYp2 VGS =.
Part NumberBSS129 Datasheet
DescriptionN-Channel Depletion-Mode MOSFET Transistors
ManufacturerUnknown Manufacturer
Overview ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2406L ND2410L BSS129 230 V(BR)DSV Min (V) 240 rDS(on) Max (W) 6 10 20 VGS(off) (. D D D D D High Breakdown Voltage: 260 V Normally “On” Low rDS Switch: 3.5 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance TO-226AA (TO-92) 1 Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switch.