N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor
Other Datasheets by Siliconix
Part Number
Description
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
888129
N-Channel Depletion-Mode MOS Transistor
. HS i l i c o n i x incorporated
PRODUCT SUMMARY
V(BR)OSV rOS(ON)
10
(V)
(.n )
(A)
PACKAGE
230
20
0.15. TO-92 CORM
CD = Center Drain. RM = Reverse Mold
Performance Curves: VDDV24 (See Section 7)
TO-92-18
BOTTOM VIEW
1 GATE 2 DRAIN
3 SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
BSS129
UNITS
Drain-Source Voltage
Vos
230
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current
I TA= 35DC
10
0.15
A
Pulsed Drain Current 1
10M
0.60
Power Dissipation
Po
1
W
Operating Junction and Storage Temperature
TJ.
BSS129 Datasheet
