Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
Features
- 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V.
- High density cell design for extremely low RDS(ON).
- Rugged and Reliable.
- Compact industry standard SOT-23 surface mount
package
DD
SOT-23
S G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed
(Note 1)
PD Maximum Power Di.
BSS123 Datasheet
