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BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Key Features

  • 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V.
  • High density cell design for extremely low RDS(ON).
  • Rugged and Reliable.
  • Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1) PD Maximum Power Di.

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Other Datasheets by Fairchild (now onsemi)

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BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.