BSS123W Overview
Description
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.
Key Features
- 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
- High Density Cell Design for Low RDS(ON)
- Rugged and Reliable
- Ultra Small Surface Mount Package
- Very Low Capacitance
- Fast Switching Speed
- Lead Free / RoHS Compliant
