BSS123W Datasheet | Fairchild Semiconductor

- N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features - 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V - High Density Cell Design for Low RDS(ON) - Rugged and Reliable - Ultra Small Surface Mount Package - Very Low Capacitance - Fast Switching Speed - Lead Free / RoHS pliant Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited...