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BSS123W - N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.

This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.

Key Features

  • 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V.
  • High Density Cell Design for Low RDS(ON).
  • Rugged and Reliable.
  • Ultra Small Surface Mount Package.
  • Very Low Capacitance.
  • Fast Switching Speed.
  • Lead Free / RoHS Compliant.

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Full PDF Text Transcription (Reference)

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BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V • High Density Cell Design for Low RDS(ON) • Rugged and Reliable • Ultra Small Surface Mount Package • Very Low Capacitance • Fast Switching Speed • Lead Free / RoHS Compliant Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.