| Part Number | BSS123W Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and f.
* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V * High Density Cell Design for Low RDS(ON) * Rugged and Reliable * Ultra Small Surface Mount Package * Very Low Capacitance * Fast Switching Speed * Lead Free / RoHS Compliant Description This N-channel enhancement mode fiel. |
BSS123W Datasheet and Specifications PDF
The BSS123W is a N-Channel Logic Level Enhancement Mode Field Effect Transistor.
| Part Number | BSS123W Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Micro Commercial Components |
| Overview | Features +LJK'HQVH&HOO'HVLJQIRU([WUHPHO/RZ5'6 21 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK 6XUIDFH0RXQW3DFNDJH (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ 0RLVWXUH6HQVLWLYLW/HYHO Ha. +LJK'HQVH&HOO'HVLJQIRU([WUHPHO/RZ5'6 21 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK 6XUIDFH0RXQW3DFNDJH (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ 0RLVWXUH6HQVLWLYLW/HYHO Halogen Free. “Green” Device (Note 1) /HDG)UHH)LQLVK5R+6&RPSOLDQW 36XIIL['HVLJQDWHV5R+6 &RPSOLDQW. |
| Part Number | BSS123W Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | Diodes Incorporated |
| Overview |
and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
.
and Benefits
* Low Gate Threshold Voltage * Low Input Capacitance * Fast Switching Speed * Low Input/Output Leakage * High Drain-Source Voltage Rating * Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * This part is qualified to JEDEC stand. |