Part BSS123
Description 100V N-Channel Enhancement Mode MOSFE
Manufacturer PanJit Semiconductor
Size 287.59 KB
PanJit Semiconductor

BSS123 Overview

Key Features

  • RDS(ON) , VGS@10V, ID@170mA<6Ω
  • RDS(ON) , VGS@4.5V, ID@130mA<10Ω
  • Advanced Trench Process Technology
  • Specially Designed for Switch Load, PWM Application, etc
  • ESD Protected 2KV HBM
  • Lead free in compliance with EU RoHS 2011/65/EU directive
  • Green molding compound as per IEC61249 Std.. (Halogen Free) Mechanical Data
  • Case: SOT-23 Package
  • Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical - Junction to Ambient (Note
  • MIN. TYP. MAX. UNITS 100