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BSS123 - 100V N-Channel Enhancement Mode MOSFE

Key Features

  • RDS(ON) , VGS@10V, ID@170mA.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS123 100V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 100 V Current 170 mA SOT-23 Features  RDS(ON) , VGS@10V, ID@170mA<6Ω  RDS(ON) , VGS@4.5V, ID@130mA<10Ω  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std.. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026 TOP VIEW Unit: inch(mm) FIG.