| Part Number | BSS123 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista.
* 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V * High density cell design for extremely low RDS(ON) * Rugged and Reliable * Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDS. |
BSS123 Datasheet and Specifications PDF
The BSS123 is a N-Channel Logic Level Enhancement Mode Field Effect Transistor.
| Part Number | BSS123 Datasheet |
|---|---|
| Description | 100V N-Channel Enhancement Mode MOSFE |
| Manufacturer | PanJit Semiconductor |
| Overview |
PBSS123
100V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
100 V Current 170 mA
SOT-23
Features
RDS(ON) , VGS@10V, ID@170mA<6Ω RDS(ON) , VGS@4.5V, ID@130mA<10Ω Advanced Trench P.
* RDS(ON) , VGS@10V, ID@170mA<6Ω * RDS(ON) , VGS@4.5V, ID@130mA<10Ω * Advanced Trench Process Technology * Specially Designed for Switch Load, PWM Application, etc * ESD Protected 2KV HBM * Lead free in compliance with EU RoHS 2011/65/EU directive * Green molding compound as per IEC61249 Std.. (Halo. |
| Part Number | BSS123 Datasheet |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| Manufacturer | Diodes Incorporated |
| Overview |
and Applications
These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been d.
and Benefits
* Low Gate Threshold Voltage * Low Input Capacitance * Fast Switching Speed * Low Input/Output Leakage * High Drain-Source Voltage Rating * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * This part is qualified to JEDEC stand. |
| Part Number | BSS123 Datasheet |
|---|---|
| Description | Small-Signal-Transistor |
| Manufacturer | Infineon |
| Overview |
Rev. 1.0
SIPMOS Small-Signal-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated
BSS123
Product Summary
VDS RDS(on) ID
100 V 6Ω
0.17 A
Gate pin1
Drain pin 3
SOT23
3
.
* N-Channel * Enhancement mode * Logic Level * dv/dt rated BSS123 Product Summary VDS RDS(on) ID 100 V 6Ω 0.17 A Gate pin1 Drain pin 3 SOT23 3 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package SOT23 SOT23 Ordering Code Q62702-S512 Q67000-S245 Tape and Reel Information E6327: 3000 pcs. |