ABSOLUTE MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Parameter N-MOSFET Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10us) Continous Source-Drain Diode Current Power Dissipation Thermal Resistance from Junction to Ambient (note 1) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM IS PD RθJA TJ TSTG TL Value 100 ±20 0.17 0.68 0.17 0.35 357 150 -55~+150 260 Unit V V A A A W ℃/W ℃ ℃ ℃ ZZZ FM HOHF FRP 1 A-2,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition STATIC CHARACTERISTICS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage (note 2) Drain-source on-resistance(note 2) Forward tranconductance(note 2) Diode forward voltage V(BR)DSS IDSS IGSS VGS(th) RDS(on) gFS VSD VGS = 0V, ID =250µA VDS =100V,VGS = 0V VDS =20V,VGS = 0V VGS =±20V, V...
JCET
