BSS123
BSS123 is 100V N-Channel Enhancement Mode MOSFE manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@10V, ID@170m A<6Ω
- RDS(ON) , VGS@4.5V, ID@130m A<10Ω
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc
- ESD Protected 2KV HBM
- Lead free in pliance with EU Ro HS 2011/65/EU directive
- Green molding pound as per IEC61249 Std..
(Halogen Free)
Mechanical Data
- Case: SOT-23 Package
- Terminals: Solderable per MIL-STD-750, Method 2026
TOP VIEW
Unit: inch(mm)
FIG.183
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT 100 +20 170 680 500
4 -55~150
UNITS V V m A m A m W m W/ o C o C o C/W
August 1,2016-REV.00
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