BSS92 Datasheet and Specifications PDF

The BSS92 is a P-channel transistor.

Key Specifications

Max Operating Temp150 °C
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Part NumberBSS92 Datasheet
ManufacturerNXP Semiconductors
Overview P-channel enhancement mode vertical D-MOS transistor in a TO-92 (SOT54) variant package. handbook, halfpage BSS92 PINNING - TO-92 (SOT54) variant PIN 1 2 3 SYMBOL g d s DESCRIPTION gate drain source .
* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown. APPLICATIONS
* Line current interrupter in telephony applications
* Relay, high speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 (SOT54) variant pack.
Part NumberBSS92 Datasheet
DescriptionP-Channel 200-V (D-S) MOSFETs
ManufacturerVishay
Overview VP2020L, BSS92 Vishay Siliconix P-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VP2020L BSS92 V(BR)DSS Min (V) –200 –200 rDS(on) Max (W) 20 @ VGS = –4.5 V 20 @ VGS = –10 V VGS(th) (V) –. D High-Side Switching D Secondary Breakdown Free:
*220 V D Low On-Resistance: 11.5 W D Low-Power/Voltage Driven D Excellent Thermal Stability BENEFITS D Ease in Driving Switches D Full-Voltage Operation D Low Offset Voltage D Easily Driven Without Buffer D No High-Temperature “Run-Away” APPLICATIO.
Part NumberBSS92 Datasheet
DescriptionP-Channel Enhancement-Mode MOS Transistors
ManufacturerTEMIC Semiconductors
Overview Siliconix TP1220L, TP/VP2020L, BSS92 PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number TP1220L TP2020L VP2020L BSS92 V(BR)DSS Min (V) -120 -200 -200 -200 rDS(on) Max (W) 20 . D HighĆSide Switching D Secondary Breakdown Free: -220 V D Low OnĆResistance: 11.5 W D LowĆPower/Voltage Driven D Excellent Thermal Stability Benefits D Ease in Driving Switches D FullĆVoltage Operation D Low Offset Voltage D Easily Driven Without Buffer D No HighĆTemperature RunĆAway" Applicatio.
Part NumberBSS92 Datasheet
DescriptionSIPMOS Small-Signal Transistor
ManufacturerSiemens Semiconductor Group
Overview BSS 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSS 92 Type BSS 92 BSS 92 BSS 92 Pin 2 D Marking SS92 Pin 3 S VDS -240 V . less otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -240 -1.5 -0.1 -10 -10 10 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS.

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