| Part Number | BT150 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to. t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 2.5 4 35 38 6.1 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state c. |
BT150 Datasheet
The BT150 is a Thyristors logic level.
| Part Number | BT150 |
|---|---|
| Description | SCRs |
| Manufacturer | HAOPIN |
| Overview | Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to. Blocking voltage to 800 V On-state RMS current to 4 A Ultra low gate trigger current SYMBOL VDRM VRRM PARAMETER Repetitive peak off-state voltages Voltages IT RMS ITSM RMS on-state current Non-repetitive peak on-state current 500R 600R 800R Value 500 600 800 4 35 Unit V A A SYMBOL Rth j-mb R. |
| Part Number | BT150 |
|---|---|
| Description | SCRs |
| Manufacturer | Unisonic Technologies |
| Overview | Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications includ. tate Current (half sine wave; TJ = 25 °C prior to surge) t=10ms t=8.3ms ITSM I2t for Fusing (t = 10 ms) I2t 35 38 A 6.1 A2s Repetitive Rate of Rise of On-State Current After Triggering (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms) dIT /dt 50 A/μs Peak Gate Current Peak Gate Voltage IGM . |