BT169DW Datasheet
BT169DW Datasheet (Kexin Semiconductor)
Kexin Semiconductor
0.1max +0.05 0.90 -0.05 +0.15 1.65 -0.15 SMD Type Thyristors logic level BT169DW Thyristor Features Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low .
Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 1 2 3 2.9 4.6 0.70+0.1 -0.1 1 cathode 2 anode 3 gate 4 anode Absolute Maxim.
BT169DW Datasheet (Philips Semiconductors)
Philips Semiconductors
Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended t.
e wave; Tsp ≤ 112 ˚C all conduction angles half sine wave; Tj = 125 ˚C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms I2t I2t for fusing t = 10 ms dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs on-state current after triggering IGM VGM VRGM PGM PG(.
BT169DW Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performa.
Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website： isc & iscsemi is registered trademark isc Thyristors BT169D.