BT258S-800R Datasheet and Specifications PDF

Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to b.

A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. 800 5 8 75 82 28 50 2 5 5 0.5 150 1251 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VRGM PGM PG(AV).

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and .

and benefits
* Direct interfacing with low power drivers and microcontrollers
* High bidirectional blocking voltage capability
* High thermal cycling performance
* Planar passivated for voltage ruggedness and reliability
* Sensitive gate suitable for logic level controls
* Surface mountable package .

isc Thyristors BT258S-800R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aid.

wise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IH Holding current IL Latching current VRRM= 800V, Tj=125℃ VDRM= 800V, Tj=125℃ ITM= 16A VD=12V;.

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to.

Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) 600R 800R Value 600 800 8 75 Unit V A A .