| Part Number | BU1706AX Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency electronic lighting ballast app. ecified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0; VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 1.5A; IB= 0.3A VCE= V. |
BU1706AX Datasheet and Specifications PDF
The BU1706AX is a NPN Transistor.
| Part Number | BU1706AX Datasheet |
|---|---|
| Description | Silicon Diffused Power Transistor |
| Manufacturer | NXP Semiconductors |
| Overview | Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QU. CEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value Total power dissipation . |
| Part Number | BU1706AX Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in high frequency electronic lighting ballast applications. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified ou. itter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=100mA ;IB=0;L=25mH IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCE=rated;VBE=0 Tj=125 VEB=12V; IC=0 IC=5mA ; VCE=10V IC=0.4A ; VCE=3V IC=1.5A. |