BU2506DF Datasheet
BU2506DF Datasheet (SavantIC)
SavantIC
·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Intended for use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collecto.
IEBO hFE-1 hFE-2 VF CC Collector-emitter sustaining voltage IC=100mA ;IB=0, IE=600mA ;IC=0 IC=3A ;IB=0.79A IC=3A ;IB=0.79A VCE=RatedVCE ;VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V IF=3.0A IE=0; f=1MHz;VCB=10V 700 V Emitter-base breakdown voltage 7.5 13.5 V Collector-emitter.
BU2506DF Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA.
CTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0,L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.79A VBE(sat) Base.
BU2506DF Datasheet (NXP Semiconductors)
NXP Semiconductors
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circui.
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC).