BU2506DF Overview
Key Specifications
Height: 12.7 mm
Length: 127 mm
Width: 76.2 mm
Max Operating Temp: 150 °C
Description
With TO-3PFa package - High voltage - High speed switching - Built-in damper diode APPLICATIONS - Intended for use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 700 5 8 3 5 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2506DF SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC Collector-emitter sustaining voltage IC=100mA ;IB=0, IE=600mA ;IC=0 IC=3A ;IB=0.79A IC=3A ;IB=0.79A VCE=RatedVCE ;VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V IF=3.0A IE=0; f=1MHz;VCB=10V 700 V Emitter-base breakdown voltage 7.5 13.5 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.1 1.0 2.0 95 208 V Collector cut-off current mA Emitter cut-off current mA DC current gain 12 DC current gain 3.8 5.5 7.5 Diode forward voltage 1.6 2.0 V Collector output capacitance 47 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2506DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3.
