BU2506DX Datasheet and Specifications PDF

The BU2506DX is a SILICON POWER TRANSISTOR.

Key Specifications

PackageSOT
Max Operating Temp150 °C

BU2506DX Datasheet

BU2506DX Datasheet (SavantIC)

SavantIC

BU2506DX Datasheet Preview

·With TO-3PML package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 sim.

voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=3.0A ;IB=0.79 A IC=3.0A ;IB=0.79 A VCE=BVCES;.

BU2506DX Datasheet (Inchange Semiconductor)

Inchange Semiconductor

BU2506DX Datasheet Preview

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA.

CTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0,L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.79A VBE(sat) Base.

BU2506DX Datasheet (NXP Semiconductors)

NXP Semiconductors

BU2506DX Datasheet Preview

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circui.

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC).

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