BU2508AW Datasheet and Specifications PDF

The BU2508AW is a NPN Transistor.

Key Specifications

PackageSOT
Max Operating Temp150 °C
Part NumberBU2508AW Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC=.
Part NumberBU2508AW Datasheet
DescriptionSilicon Diffused Power Transistor
ManufacturerNXP Semiconductors
Overview Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Feature. exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Co.

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