The BU2508DW is a NPN Transistor.
| Package | SOT |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | BU2508DW Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. LECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC=. |
| Part Number | BU2508DW Datasheet |
|---|---|
| Description | Silicon Diffused Power Transistor |
| Manufacturer | NXP Semiconductors |
| Overview | Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colo. exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC). |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
| Part Number | Manufacturer | Description |
|---|---|---|
| BU2508DF | Inchange Semiconductor | NPN Transistor |
| BU2508DF | SavantIC | SILICON POWER TRANSISTOR |
| BU2508DF | NXP Semiconductors | Silicon Diffused Power Transistor |
| 2508DX | NXP Semiconductors | BU2508DX |
| BU2508-E3 | Vishay | Bridge Rectifiers |
| BU2508A | NXP Semiconductors | Silicon Diffused Power Transistor |
| BU2508AX | NXP Semiconductors | Silicon Diffused Power Transistor |