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BU2722AF Datasheet

The BU2722AF is a Silicon Diffused Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBU2722AF
ManufacturerNXP Semiconductors
Overview New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand . um Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base cu.
Part NumberBU2722AF
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Abso. e IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.0A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 1.0 1.0 2.0 1.0 V ICES .