BU406D Datasheet and Specifications PDF

The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for use in horizontal deflection outp.

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·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CT.

Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS BU406D BU407D SYMBOL MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 V 150 VCEsat VBEsat Collector-emitter saturation.

·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable.

stor BU406D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturat.

The BU406D is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed horizontal deflection output stages of TVs and CTVs. Features: D Collector−Emitter Sustaining V.

D Collector
*Emitter Sustaining Voltage: VCEV = 330V (Min) D Low saturation Voltage: VCE(sat) = 1V (Max) @ C = 5A D Fast Switching Speed: tf = 0.75s (Max) Absolute Maximum Ratings: Collector
*Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .