SavantIC BU406D
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-220C package●High voltage
●Fast switching speed
●Low saturation voltage
●Built-in damper diode
APPLICATIONS
●For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base EmitterDESCRIPTION
BU406D BU407D Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BU406D BU407D BU406D BU407D CONDITIONS Open emitter VALUE 400 330 200 150 6 7 10 4 TC=25 60 150 -65~150 UNIT V VCEO VEBO IC ICM IB Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Open base Open collector V V A A A W Maximum operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS BU406D BU407D SYMBOL MIN TYP.