BU407D Overview
Key Specifications
Max Operating Temp: 150 °C
Description
With TO-220C package - High voltage - Fast switching speed - Low saturation voltage - Built-in damper diode APPLICATIONS - For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BU406D BU407D Absolut SYMBOL VCBO PARAMETER Collector-base voltage BU406D BU407D BU406D BU407D CONDITIONS Open emitter VALUE 400 330 200 150 6 7 10 4 TC=25 60 150 -65~150 UNIT V VCEO VEBO IC ICM IB Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Open base Open collector V V A A A W Maximum operating junction temperature Storage temperature SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS BU406D BU407D SYMBOL MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 V 150 VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A IC=5A ;IB=0.65A VCE=400V; VBE=-1.5V 1.0 V Base-emitter saturation voltage 1.3 V BU406D ICEV Collector cut-off current BU407D 15 VCE=330V; VBE=-1.5V VEB=6.0V; IC=0 IC=2A ; VCE=5V IF=5A IC=0.5A ;VCE=10V;f=1.0MHz IC=5A ;VCC=40V IBend=0.65A 10 15 400 mA IEBO hFE VF fT tf Emitter cut-off current mA DC current gain Diode forward voltage 1.5 V Transition frequency MHz Fall time 0.75 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU406D BU407D Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3.
