BU407D Datasheet
BU407D Datasheet (SavantIC)
SavantIC
·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CT.
Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS BU406D BU407D SYMBOL MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 V 150 VCEsat VBEsat Collector-emitter saturation.
BU407D Datasheet (STMicroelectronics)
STMicroelectronics
The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for use in horizontal deflection outp.
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BU407D Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable.
stor BU407D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturat.
BU407D Datasheet (Toshiba)
Toshiba
BU407D SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . Built in Damper Type . High Collector Current Capa.
. Built in Damper Type . High Collector Current Capability High Collector Power Dissipation Capability Unit in mm 1Q3MAX. 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Repetitive Peak Base Current (Repet.