BU407D - Silicon NPN Transistor

Toshiba

Key Features

. Built in Damper Type . High Collector Current Capability High Collector Power Dissipation Capability Unit in mm 1Q3MAX. 03.6±O.2.

BU407D silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	BU407D
Manufacturer	Toshiba
File Size	123.80 KB
Description	Silicon NPN Transistor
Datasheet	BU407D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BU407D SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . Built in Damper Type . High Collector Current Capability High Collector Power Dissipation Capability Unit in mm 1Q3MAX. 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Repetitive Peak Base Current (Repetitive) Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO VEBO ic ICM ICP IBM RATING 330 150 10 15 60 r stg 150 -55-150 EQUIVALENT CIRCUIT B o- UNIT I A3 2.5 4 2.5 4 sl %> < S r- 1. BASE 2. COLLECTOR (HEAT SINK) 3.