BU407H Datasheet
BU407H Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
BU407/407H BU407/407H High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C un.
off Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H VBE(sat) fT tOFF ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU407/407H Typical Characteristics.
BU407H Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable .
ion to Ambient 70 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collect.