| Part Number | BU505 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps.
It’s characteristics make also ideal for power supp.
* HIGH VOLTAGE CAPABILITY * VERY HIGH SWITCHING SPEED * HIGH RUGGEDNESS Applications * ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING * SWITCH MODE POWER SUPPLIES Description The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast . |
BU505 Datasheet and Specifications PDF
The BU505 is a HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR.
| Part Number | BU505 Datasheet |
|---|---|
| Description | Silicon diffused power transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode.
2
BU505; BU505D
2
APPLICATIONS • Horizontal deflection circuits of colo.
power dissipation fall time see Fig.3 see Fig.3 Tmb ≤ 25 °C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS * * * * * * * * 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 * V V V V A A A W µs UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal r. |
| Part Number | BU505 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High voltage,high speed-switching APPLICATIONS ·For horizontal deflection circuits of color TV receivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESC. CONDITIONS MIN TYP. BU505 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.9 A 1.3 V hFE DC current. |
| Part Number | BU505 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. tor INCHANGE Semiconductor BU505 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage I. |