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BU505F - Silicon diffused power transistors

General Description

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base.

The BU505DF has an integrated efficiency diode.

Horizontal deflection circuits of colour television receivers.

Key Features

  • 2 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BU505F; BU505DF Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receivers. PINNING 1 2 3 MBC668 BU505F; BU505DF 2 2 1 MBB008 1 3 MBB077 3 a. BU505F. DESCRIPTION b. BU505DF. PIN 1 2 3 mb base Front view collector emitter mounting base; electrically isolated from all pins Fig.1 Simplified outline (SOT186) and symbols.