| Part Number | BU505F Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Colle. |
BU505F Datasheet and Specifications PDF
The BU505F is a NPN Transistor.
| Part Number | BU505F Datasheet |
|---|---|
| Description | Silicon diffused power transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode. APPLICATIONS • Horizontal .
) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 4 and 5 see Figs 4 and 5 Th ≤ 25 °C; see Fig.2 inductive load; see Fig.10 VBE = 0 open base IC = 2 A; IB = 900 mA; see Fig.8 IF = 2 A CONDITIONS * * * * * * * * 0.7 TYP. MA. |