| Part Number | BU931T Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Fast switching speed ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions.. ·High voltage ignition coil driver PINNING PIN 1 2 3 Base Collector;connected to mounting b. cified PARAMETER CONDITIONS MIN TYP. BU931T SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH 400 V VCEsat-1 Collector-emitter saturation voltage IC=7A ;IB=0.07A 1.6 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.1 . |
BU931T Datasheet and Specifications PDF
The BU931T is a SILICON POWER TRANSISTOR.
| Part Number | BU931T Datasheet |
|---|---|
| Description | NPN power Darlington transistor |
| Manufacturer | STMicroelectronics |
| Overview |
This is a high voltage power Darlington transistor developed using multi-epitaxial planar technology. It has been properly designed for automotive environment as electronic ignition power actuators.
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* AEC-Q101 qualified * Very rugged Bipolar technology * High operating junction temperature Applications * High ruggedness electronic ignitions Description This is a high voltage power Darlington transistor developed using multi-epitaxial planar technology. It has been properly designed for automoti. |
| Part Number | BU931T Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIM. VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 7A; IB= 70mA 2.2 V V BE(. |